N-Channel MOSFET, 100 A, 30 V, 8-Pin PG-TDSON-8 Infineon BSC0502NSIATMA1

BSC0502NSIATMA1 N-Channel MOSFET, 100 A, 30 V, 8-Pin PG-TDSON-8 Infineon
Infineon

Product Information

Maximum Drain Source Voltage:
30 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
OptiMOS™ 5
Channel Type:
N
Maximum Gate Threshold Voltage:
2V
Maximum Drain Source Resistance:
0.0023 O
Package Type:
SuperSO8 5 x 6
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
100 A
Transistor Material:
Si
Pin Count:
8
RoHs Compliant
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This is N-Channel MOSFET 100 A 30 V 8-Pin PG-TDSON-8 manufactured by Infineon. The manufacturer part number is BSC0502NSIATMA1. It has a maximum of 30 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product optimos™ 5, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 2v of maximum gate threshold voltage. It provides up to 0.0023 o maximum drain source resistance. The package is a sort of superso8 5 x 6. It consists of 1 elements per chip. While 100 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It contains 8 pins.

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Datasheet - BSC0502NSIATMA1(Technical Reference)

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You will get a confirmation email regarding your order of N-Channel MOSFET, 100 A, 30 V, 8-Pin PG-TDSON-8 Infineon BSC0502NSIATMA1. You can also check on our website or by contacting our customer support team for further order details on N-Channel MOSFET, 100 A, 30 V, 8-Pin PG-TDSON-8 Infineon BSC0502NSIATMA1.
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Yes. We ship BSC0502NSIATMA1 Internationally to many countries around the world.