N-Channel MOSFET, 112 A, 40 V, 9-Pin DirectFET Medium Can Infineon AUIRL7736M2TR

AUIRL7736M2TR N-Channel MOSFET, 112 A, 40 V, 9-Pin DirectFET Medium Can Infineon
Infineon

Product Information

Maximum Drain Source Voltage:
40 V
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Series:
HEXFET
Channel Type:
N
Maximum Gate Threshold Voltage:
2.5V
Package Type:
DirectFET ISOMETRIC
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
112 A
Transistor Material:
Si
Maximum Drain Source Resistance:
0.003 O
RoHs Compliant
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This is N-Channel MOSFET 112 A 40 V 9-Pin DirectFET Medium Can manufactured by Infineon. The manufacturer part number is AUIRL7736M2TR. It has a maximum of 40 v drain source voltage. The product carries enhancement channel mode. The product is available in surface mount configuration. The product hexfet, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 2.5v of maximum gate threshold voltage. The package is a sort of directfet isometric. It consists of 1 elements per chip. While 112 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 0.003 o maximum drain source resistance.

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Datasheet - AUIRL7736M2TR(Technical Reference)

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