SiC N-Channel MOSFET, 45 A, 1200 V, 3-Pin HiP247-4LL STMicroelectronics SCTWA40N120G2V-4
Product Information
Maximum Drain Source Voltage:
1200 V
Maximum Continuous Drain Current:
45 A
Mounting Type:
Through Hole
Series:
SCTWA40N120G2V-4
Channel Type:
N
Maximum Drain Source Resistance:
0.07 Ω
Package Type:
HiP247-4
Transistor Material:
SiC
Pin Count:
4
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 200°C (TJ)
Package / Case:
TO-247-4
Rds On (Max) @ Id, Vgs:
100mOhm @ 20A, 18V
Gate Charge (Qg) (Max) @ Vgs:
61 nC @ 18 V
Vgs(th) (Max) @ Id:
4.9V @ 1mA
REACH Status:
REACH Unaffected
edacadModel:
SCTWA40N120G2V-4 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
18V
edacadModelUrl:
/en/models/18085070
Drain to Source Voltage (Vdss):
1200 V
Vgs (Max):
+18V, -5V
standardLeadTime:
32 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
1233 pF @ 800 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-247-4
Packaging:
Bulk
Current - Continuous Drain (Id) @ 25°C:
36A (Tc)
Power Dissipation (Max):
277W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SCTWA40
ECCN:
EAR99
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This is SiC N-Channel MOSFET 45 A 1200 V 3-Pin HiP247-4LL manufactured by STMicroelectronics. The manufacturer part number is SCTWA40N120G2V-4. It has a maximum of 1200 v drain source voltage. While 45 a of maximum continuous drain current. The product is available in through hole configuration. The product sctwa40n120g2v-4, is a highly preferred choice for users. The product is available in [Cannel Type] channel. It provides up to 0.07 ω maximum drain source resistance. The package is a sort of hip247-4. The transistor is manufactured from highly durable sic material. It contains 4 pins. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 200°c (tj) operating temperature range. Moreover, the product comes in to-247-4. It has a maximum Rds On and voltage of 100mohm @ 20a, 18v. The maximum gate charge and given voltages include 61 nc @ 18 v. The typical Vgs (th) (max) of the product is 4.9v @ 1ma. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 18v. The product has a 1200 v drain to source voltage. The maximum Vgs rate is +18v, -5v. It has a long 32 weeks standard lead time. The product's input capacitance at maximum includes 1233 pf @ 800 v. to-247-4 is the supplier device package value. In addition, bulk is the available packaging type of the product. The continuous current drain at 25°C is 36a (tc). The product carries maximum power dissipation 277w (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to sctwa40, a base product number of the product. The product is designated with the ear99 code number.
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