Name: SIHB21N80AE-GE3, Vishay
Brand: Vishay
SKU: ET21591989
Price: 0.80 GBP
Availability: InStock

SIHB21N80AE-GE3 N-Channel MOSFET, 17.4 A, 800 V, 3-Pin D2PAK Vishay

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Product Information

Maximum Drain Source Voltage:

800 V

Maximum Continuous Drain Current:

17.4 A

Mounting Type:

Surface Mount

Series:

Channel Type:

Maximum Gate Threshold Voltage:

2 → 4V

Maximum Drain Source Resistance:

0.205 Ω

Package Type:

D2PAK (TO-263)

Number of Elements per Chip:

Pin Count:

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This is N-Channel MOSFET 17.4 A 800 V 3-Pin D2PAK manufactured by Vishay. The manufacturer part number is SIHB21N80AE-GE3. It has a maximum of 800 v drain source voltage. While 17.4 a of maximum continuous drain current. The product is available in surface mount configuration. The product e, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 2 → 4v of maximum gate threshold voltage. It provides up to 0.205 ω maximum drain source resistance. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. It contains 3 pins.

Datasheet - SIHB21N80AE-GE3(Technical Reference)

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You can order Vishay brand products with SIHB21N80AE-GE3 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.

Yes. Our products in MOSFETs category are shipped in lowest possible time.

You will get a confirmation email regarding your order of N-Channel MOSFET, 17.4 A, 800 V, 3-Pin D2PAK Vishay SIHB21N80AE-GE3. You can also check on our website or by contacting our customer support team for further order details on N-Channel MOSFET, 17.4 A, 800 V, 3-Pin D2PAK Vishay SIHB21N80AE-GE3.

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N-Channel MOSFET, 17.4 A, 800 V, 3-Pin D2PAK Vishay SIHB21N80AE-GE3

SIHB21N80AE-GE3

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