N-Channel MOSFET, 8.4 A, 600 V, 3-Pin D2PAK Vishay SiHB186N60EF-GE3

SiHB186N60EF-GE3 N-Channel MOSFET, 8.4 A, 600 V, 3-Pin D2PAK Vishay
Vishay

Product Information

Maximum Drain Source Voltage:
600 V
Maximum Continuous Drain Current:
8.4 A
Mounting Type:
Surface Mount
Series:
EF
Channel Type:
N
Maximum Gate Threshold Voltage:
3 → 5V
Maximum Drain Source Resistance:
0.168 Ω
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Pin Count:
3
RoHs Compliant
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This is N-Channel MOSFET 8.4 A 600 V 3-Pin D2PAK manufactured by Vishay. The manufacturer part number is SiHB186N60EF-GE3. It has a maximum of 600 v drain source voltage. While 8.4 a of maximum continuous drain current. The product is available in surface mount configuration. The product ef, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 3 → 5v of maximum gate threshold voltage. It provides up to 0.168 ω maximum drain source resistance. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. It contains 3 pins.

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Datasheet - SiHB186N60EF-GE3(Technical Reference)

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