N-Channel MOSFET, 8 A, 800 V, 3-Pin D2PAK Vishay SIHB11N80AE-GE3

SIHB11N80AE-GE3 N-Channel MOSFET, 8 A, 800 V, 3-Pin D2PAK Vishay
Vishay

Product Information

Maximum Drain Source Voltage:
800 V
Maximum Continuous Drain Current:
8 A
Mounting Type:
Surface Mount
Series:
E
Channel Type:
N
Maximum Gate Threshold Voltage:
2 → 4V
Maximum Drain Source Resistance:
0.391 Ω
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Pin Count:
3
RoHs Compliant
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This is N-Channel MOSFET 8 A 800 V 3-Pin D2PAK manufactured by Vishay. The manufacturer part number is SIHB11N80AE-GE3. It has a maximum of 800 v drain source voltage. While 8 a of maximum continuous drain current. The product is available in surface mount configuration. The product e, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 2 → 4v of maximum gate threshold voltage. It provides up to 0.391 ω maximum drain source resistance. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. It contains 3 pins.

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Datasheet - SIHB11N80AE-GE3(Technical Reference)

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