N-Channel MOSFET Transistor, 14 A, 80 V, 8-Pin WDFN8 ON Semiconductor NVTFS6H888NLTAG

NVTFS6H888NLTAG N-Channel MOSFET Transistor, 14 A, 80 V, 8-Pin WDFN8 ON Semiconductor
NVTFS6H888NLTAG
onsemi

Product Information

Maximum Drain Source Voltage:
80 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
NVT
Channel Type:
N
Maximum Gate Threshold Voltage:
2V
Maximum Drain Source Resistance:
0.05 Ω
Package Type:
WDFN
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
14 A
Pin Count:
8
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
8-PowerWDFN
Rds On (Max) @ Id, Vgs:
50mOhm @ 5A, 10V
title:
NVTFS6H888NLTAG
Vgs(th) (Max) @ Id:
2V @ 15µA
REACH Status:
REACH Unaffected
edacadModel:
NVTFS6H888NLTAG Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
edacadModelUrl:
/en/models/12181267
Drain to Source Voltage (Vdss):
80 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
2.9W (Ta), 23W (Tc)
Qualification:
AEC-Q101
standardLeadTime:
16 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
258 pF @ 40 V
Mounting Type:
Surface Mount
Grade:
Automotive
Series:
-
Gate Charge (Qg) (Max) @ Vgs:
6 nC @ 10 V
Supplier Device Package:
8-WDFN (3.3x3.3)
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
4.9A (Ta), 14A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NVTFS6
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is N-Channel MOSFET Transistor 14 A 80 V 8-Pin WDFN8 ON Semiconductor manufactured by onsemi. The manufacturer part number is NVTFS6H888NLTAG. It has a maximum of 80 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product nvt, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 2v of maximum gate threshold voltage. It provides up to 0.05 ω maximum drain source resistance. The package is a sort of wdfn. It consists of 1 elements per chip. While 14 a of maximum continuous drain current. It contains 8 pins. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in 8-powerwdfn. It has a maximum Rds On and voltage of 50mohm @ 5a, 10v. The typical Vgs (th) (max) of the product is 2v @ 15µa. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The product has a 80 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 2.9w (ta), 23w (tc). It has a long 16 weeks standard lead time. The product's input capacitance at maximum includes 258 pf @ 40 v. The product is automotive, a grade of class. The maximum gate charge and given voltages include 6 nc @ 10 v. 8-wdfn (3.3x3.3) is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 4.9a (ta), 14a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to nvtfs6, a base product number of the product. The product is designated with the ear99 code number.

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Datasheet - NVTFS6H888NLTAG(Technical Reference)
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NVTFS6H888NL(Datasheets)
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onsemi RoHS(Environmental Information)
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onsemi REACH(Environmental Information)

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