Maximum Drain Source Voltage:
1200 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
NTB
Channel Type:
N
Maximum Gate Threshold Voltage:
4.3V
Maximum Drain Source Resistance:
0.04 Ω
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
60 A
Transistor Material:
SiC
Pin Count:
7
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Rds On (Max) @ Id, Vgs:
56mOhm @ 35A, 20V
title:
NTBG040N120SC1
Vgs(th) (Max) @ Id:
4.3V @ 10mA
REACH Status:
REACH Unaffected
edacadModel:
NTBG040N120SC1 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
20V
edacadModelUrl:
/en/models/12181342
Drain to Source Voltage (Vdss):
1200 V
Vgs (Max):
+25V, -15V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
357W (Tc)
standardLeadTime:
17 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
1789 pF @ 800 V
Mounting Type:
Surface Mount
Series:
-
Gate Charge (Qg) (Max) @ Vgs:
106 nC @ 20 V
Supplier Device Package:
D2PAK-7
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
60A (Tc)
Technology:
SiCFET (Silicon Carbide)
Base Product Number:
NTBG040
ECCN:
EAR99
