Dual N-Channel MOSFET, 262 A, 60 V, 8-Pin LFPAK-E ON Semiconductor NTMJS1D4N06CLTWG

NTMJS1D4N06CLTWG Dual N-Channel MOSFET, 262 A, 60 V, 8-Pin LFPAK-E ON Semiconductor
NTMJS1D4N06CLTWG
NTMJS1D4N06CLTWG
onsemi

Product Information

Maximum Drain Source Voltage:
60 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
NTMJS1D4N06CL
Channel Type:
N
Maximum Gate Threshold Voltage:
2V
Maximum Drain Source Resistance:
1.3 Ω
Package Type:
LFPAK8
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
262 A
Transistor Material:
Si
Pin Count:
8
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2V @ 280µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
SOT-1205, 8-LFPAK56
Rds On (Max) @ Id, Vgs:
1.3mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs:
103 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
NTMJS1D4N06CLTWG Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
edacadModelUrl:
/en/models/11592821
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
4W (Ta), 180W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
7430 pF @ 30 V
standardLeadTime:
19 Weeks
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
8-LFPAK
Current - Continuous Drain (Id) @ 25°C:
39A (Ta), 262A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NTMJS1
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is Dual N-Channel MOSFET 262 A 60 V 8-Pin LFPAK-E ON Semiconductor manufactured by onsemi. The manufacturer part number is NTMJS1D4N06CLTWG. It has a maximum of 60 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product ntmjs1d4n06cl, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 2v of maximum gate threshold voltage. It provides up to 1.3 ω maximum drain source resistance. The package is a sort of lfpak8. It consists of 1 elements per chip. While 262 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It contains 8 pins. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 2v @ 280µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in sot-1205, 8-lfpak56. It has a maximum Rds On and voltage of 1.3mohm @ 50a, 10v. The maximum gate charge and given voltages include 103 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. It is shipped in tape & reel (tr) package . The product has a 60 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 4w (ta), 180w (tc). The product's input capacitance at maximum includes 7430 pf @ 30 v. It has a long 19 weeks standard lead time. 8-lfpak is the supplier device package value. The continuous current drain at 25°C is 39a (ta), 262a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to ntmjs1, a base product number of the product. The product is designated with the ear99 code number.

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NTMJS1D4N06CLTWG Datasheet(Technical Reference)
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Wafer Fab Change 17/Oct/2022(PCN Assembly/Origin)
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NTMJS1D4N06CL(Datasheets)
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onsemi RoHS(Environmental Information)
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onsemi REACH(Environmental Information)

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FAQs

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You will get a confirmation email regarding your order of Dual N-Channel MOSFET, 262 A, 60 V, 8-Pin LFPAK-E ON Semiconductor NTMJS1D4N06CLTWG. You can also check on our website or by contacting our customer support team for further order details on Dual N-Channel MOSFET, 262 A, 60 V, 8-Pin LFPAK-E ON Semiconductor NTMJS1D4N06CLTWG.
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Yes. We ship NTMJS1D4N06CLTWG Internationally to many countries around the world.