SiC MOSFET, 98 A, 1200 V, 8-Pin D2PAK−7L onsemi NVBG020N120SC1

NVBG020N120SC1 SiC MOSFET, 98 A, 1200 V, 8-Pin D2PAK−7L onsemi
onsemi

Product Information

Maximum Drain Source Voltage:
1200 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Channel Type:
N
Maximum Gate Threshold Voltage:
4.3V
Maximum Drain Source Resistance:
0.028 Ω
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
98 A
Transistor Material:
SiC
Pin Count:
7
RoHs Compliant
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This is SiC MOSFET 98 A 1200 V 8-Pin D2PAK−7L manufactured by onsemi. The manufacturer part number is NVBG020N120SC1. It has a maximum of 1200 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product is available in [Cannel Type] channel. The product carries 4.3v of maximum gate threshold voltage. It provides up to 0.028 ω maximum drain source resistance. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. While 98 a of maximum continuous drain current. The transistor is manufactured from highly durable sic material. It contains 7 pins.

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NVBG020N120SC1- Datasheet(Technical Reference)

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