Maximum Drain Source Voltage:
40 V
Typical Gate Charge @ Vgs:
126 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
245.4 W
Maximum Gate Source Voltage:
±20 V
Maximum Gate Threshold Voltage:
2V
Channel Type:
N
Width:
8mm
Length:
8.1mm
Maximum Drain Source Resistance:
660 μΩ
Package Type:
DFNW8
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
554.5 A
Minimum Gate Threshold Voltage:
1.2V
Forward Diode Voltage:
1.2V
Height:
1.15mm
Maximum Operating Temperature:
+175 °C
Pin Count:
8
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
8-PowerTDFN
Rds On (Max) @ Id, Vgs:
0.42mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs:
126 nC @ 4.5 V
Vgs(th) (Max) @ Id:
2V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
NTMTS0D6N04CLTXG Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
edacadModelUrl:
/en/models/9829162
Drain to Source Voltage (Vdss):
40 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
5W
standardLeadTime:
33 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
16013 pF @ 20 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
8-DFNW (8.3x8.4)
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
554.5A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NTMTS0
ECCN:
EAR99
