onsemi NTMTS0D6N04CTXG

NTMTS0D6N04CTXG onsemi
NTMTS0D6N04CTXG
NTMTS0D6N04CTXG
onsemi

Product Information

Maximum Drain Source Voltage:
40 V
Typical Gate Charge @ Vgs:
187 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
245 W
Maximum Gate Source Voltage:
±20 V
Maximum Gate Threshold Voltage:
4V
Channel Type:
N
Width:
8mm
Length:
8.1mm
Maximum Drain Source Resistance:
480 μΩ
Package Type:
DFNW8
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
533 A
Minimum Gate Threshold Voltage:
2V
Forward Diode Voltage:
1.2V
Height:
1.15mm
Maximum Operating Temperature:
+175 °C
Pin Count:
8
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
8-PowerTDFN
Rds On (Max) @ Id, Vgs:
0.48mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs:
187 nC @ 10 V
Vgs(th) (Max) @ Id:
4V @ 250µA
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Drain to Source Voltage (Vdss):
40 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
5W
standardLeadTime:
33 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
11800 pF @ 20 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
8-DFNW (8.3x8.4)
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
533A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NTMTS0
ECCN:
EAR99
Checking for live stock

This is manufactured by onsemi. The manufacturer part number is NTMTS0D6N04CTXG. It has a maximum of 40 v drain source voltage. With a typical gate charge at Vgs includes 187 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 245 w maximum power dissipation. It features a maximum gate source voltage of ±20 v. The product carries 4v of maximum gate threshold voltage. The product is available in [Cannel Type] channel. Furthermore, the product is 8mm wide. Its accurate length is 8.1mm. It provides up to 480 μω maximum drain source resistance. The package is a sort of dfnw8. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 533 a of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 2v. Its forward diode voltage is 1.2v . In addition, the height is 1.15mm. It has a maximum operating temperature of +175 °c. It contains 8 pins. The product offers single transistor configuration. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in 8-powertdfn. It has a maximum Rds On and voltage of 0.48mohm @ 50a, 10v. The maximum gate charge and given voltages include 187 nc @ 10 v. The typical Vgs (th) (max) of the product is 4v @ 250µa. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 40 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 5w. It has a long 33 weeks standard lead time. The product's input capacitance at maximum includes 11800 pf @ 20 v. 8-dfnw (8.3x8.4) is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 533a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to ntmts0, a base product number of the product. The product is designated with the ear99 code number.

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Datasheet NTMTS0D6N04CTXG(Technical Reference)
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Wafer Fab Change 17/Oct/2022(PCN Assembly/Origin)
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NTMTS0D6N04C(Datasheets)
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onsemi RoHS(Environmental Information)
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onsemi REACH(Environmental Information)

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