Maximum Continuous Drain Current:
12 A
Width:
3.15mm
Automotive Standard:
AEC-Q101
Transistor Configuration:
Single
Maximum Drain Source Voltage:
80 V
Maximum Gate Threshold Voltage:
4V
Package Type:
WDFN
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
4.7 nC @ 10 V
Channel Type:
N
Length:
3.15mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
18 W
Maximum Gate Source Voltage:
±20 V
Height:
0.75mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
55 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
8-PowerWDFN
Rds On (Max) @ Id, Vgs:
55mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs:
4.7 nC @ 10 V
Vgs(th) (Max) @ Id:
4V @ 15µA
REACH Status:
REACH Unaffected
edacadModel:
NVTFS6H888NTAG Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/9764733
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
80 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
2.9W (Ta), 18W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
220 pF @ 40 V
Qualification:
AEC-Q101
standardLeadTime:
20 Weeks
Mounting Type:
Surface Mount
Grade:
Automotive
Series:
-
Supplier Device Package:
8-WDFN (3.3x3.3)
Current - Continuous Drain (Id) @ 25°C:
4.7A (Ta), 12A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NVTFS6
ECCN:
EAR99
