Maximum Drain Source Voltage:
80 V
Typical Gate Charge @ Vgs:
25 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
89 W
Maximum Gate Source Voltage:
±20 V
Maximum Gate Threshold Voltage:
4V
Channel Type:
N
Width:
6.1mm
Length:
5.1mm
Maximum Drain Source Resistance:
11.4 mΩ
Package Type:
DFN
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
74 A
Minimum Gate Threshold Voltage:
2V
Forward Diode Voltage:
1.2V
Height:
1.05mm
Maximum Operating Temperature:
+175 °C
Pin Count:
5
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
8-PowerTDFN, 5 Leads
Rds On (Max) @ Id, Vgs:
6.7mOhm @ 15A, 10V
title:
NTMFS6H836NT1G
Vgs(th) (Max) @ Id:
4V @ 95µA
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Drain to Source Voltage (Vdss):
80 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
3.7W (Ta), 89W (Tc)
standardLeadTime:
30 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
1640 pF @ 40 V
Mounting Type:
Surface Mount
Series:
-
Gate Charge (Qg) (Max) @ Vgs:
25 nC @ 10 V
Supplier Device Package:
5-DFN (5x6) (8-SOFL)
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
15A (Ta), 74A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NTMFS6
ECCN:
EAR99
