Maximum Continuous Drain Current:
14 A
Width:
3.15mm
Automotive Standard:
AEC-Q101
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Maximum Gate Threshold Voltage:
3V
Package Type:
WDFN
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
25 nC @ 10 V
Channel Type:
P
Length:
3.15mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
21 W
Maximum Gate Source Voltage:
±20 V
Height:
0.8mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
72 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
8-PowerWDFN
Rds On (Max) @ Id, Vgs:
52mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs:
25 nC @ 10 V
Vgs(th) (Max) @ Id:
3V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
NVTFS5116PLTAG Models
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
edacadModelUrl:
/en/models/2748427
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
3.2W (Ta), 21W (Tc)
Qualification:
AEC-Q101
standardLeadTime:
18 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
1258 pF @ 25 V
Mounting Type:
Surface Mount
Grade:
Automotive
Series:
-
Supplier Device Package:
8-WDFN (3.3x3.3)
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
6A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NVTFS5116
ECCN:
EAR99
