Maximum Continuous Drain Current:
200 A
Width:
4.9mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
40 V
Maximum Gate Threshold Voltage:
2V
Package Type:
LFPAK8
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
70 nC @ 10 V
Channel Type:
N
Length:
5mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
110 W
Maximum Gate Source Voltage:
±20 V
Height:
1.15mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
2.2 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
SOT-1205, 8-LFPAK56
Rds On (Max) @ Id, Vgs:
1.4mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs:
70 nC @ 10 V
Vgs(th) (Max) @ Id:
2V @ 130µA
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Drain to Source Voltage (Vdss):
40 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
3.8W (Ta), 110W (Tc)
standardLeadTime:
14 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
4300 pF @ 20 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
8-LFPAK
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
38A (Ta), 200A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NTMJS1
ECCN:
EAR99
