onsemi MCH6660-TL-H
Product Information
Maximum Drain Source Voltage:
20 V
Typical Gate Charge @ Vgs:
1.7 nC @ 4.5 V, 1.8 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
800 mW
Maximum Gate Source Voltage:
-10 V, +10 V
Maximum Gate Threshold Voltage:
1.3V
Height:
0.85mm
Width:
1.6mm
Length:
2mm
Maximum Drain Source Resistance:
136 mΩ, 266 mΩ
Package Type:
MCPH
Number of Elements per Chip:
2
Maximum Continuous Drain Current:
1.5 A, 2 A
Transistor Material:
Si
Channel Type:
N, P
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Transistor Configuration:
Isolated
FET Feature:
Logic Level Gate
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
-
Operating Temperature:
150°C (TJ)
Package / Case:
6-SMD, Flat Leads
Gate Charge (Qg) (Max) @ Vgs:
1.8nC @ 4.5V
REACH Status:
REACH Unaffected
Rds On (Max) @ Id, Vgs:
136mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C:
2A, 1.5A
Configuration:
N and P-Channel
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
128pF @ 10V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
6-MCPH
Power - Max:
800mW
Technology:
MOSFET (Metal Oxide)
Base Product Number:
MCH6660
ECCN:
EAR99
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Yes. We ship MCH6660-TL-H Internationally to many countries around the world.
This is manufactured by onsemi. The manufacturer part number is MCH6660-TL-H. It has a maximum of 20 v drain source voltage. With a typical gate charge at Vgs includes 1.7 nc @ 4.5 v, 1.8 nc @ 4.5 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 800 mw maximum power dissipation. It features a maximum gate source voltage of -10 v, +10 v. The product carries 1.3v of maximum gate threshold voltage. In addition, the height is 0.85mm. Furthermore, the product is 1.6mm wide. Its accurate length is 2mm. It provides up to 136 mω, 266 mω maximum drain source resistance. The package is a sort of mcph. It consists of 2 elements per chip. While 1.5 a, 2 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 6 pins. The product offers isolated transistor configuration. The FET features of the product include logic level gate. It is assigned with possible HTSUS value of 8541.21.0095. The product has 150°c (tj) operating temperature range. Moreover, the product comes in 6-smd, flat leads. The maximum gate charge and given voltages include 1.8nc @ 4.5v. In addition, it is reach unaffected. It has a maximum Rds On and voltage of 136mohm @ 1a, 4.5v. The continuous current drain at 25°C is 2a, 1.5a. The product is available in n and p-channel configuration. It is shipped in tape & reel (tr) package . The product has a 20v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 128pf @ 10v. 6-mcph is the supplier device package value. The maximum power of the product is 800mw. This product use mosfet (metal oxide) technology. Moreover, it corresponds to mch6660, a base product number of the product. The product is designated with the ear99 code number.
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