Maximum Drain Source Voltage:
20 V
Typical Gate Charge @ Vgs:
1.7 nC @ 4.5 V, 1.8 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
800 mW
Maximum Gate Source Voltage:
-10 V, +10 V
Maximum Gate Threshold Voltage:
1.3V
Height:
0.85mm
Width:
1.6mm
Length:
2mm
Maximum Drain Source Resistance:
136 mΩ, 266 mΩ
Package Type:
MCPH
Number of Elements per Chip:
2
Maximum Continuous Drain Current:
1.5 A, 2 A
Transistor Material:
Si
Channel Type:
N, P
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Transistor Configuration:
Isolated
FET Feature:
Logic Level Gate
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
-
Operating Temperature:
150°C (TJ)
Package / Case:
6-SMD, Flat Leads
Rds On (Max) @ Id, Vgs:
136mOhm @ 1A, 4.5V
title:
MCH6660-TL-H
REACH Status:
REACH Unaffected
Current - Continuous Drain (Id) @ 25°C:
2A, 1.5A
Configuration:
N and P-Channel
Manufacturer:
onsemi
Drain to Source Voltage (Vdss):
20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
128pF @ 10V
Mounting Type:
Surface Mount
Series:
-
Gate Charge (Qg) (Max) @ Vgs:
1.8nC @ 4.5V
Supplier Device Package:
6-MCPH
Packaging:
Tape & Reel (TR)
Power - Max:
800mW
Technology:
MOSFET (Metal Oxide)
Base Product Number:
MCH6660
ECCN:
EAR99
