Maximum Drain Source Voltage:
24 V
Typical Gate Charge @ Vgs:
49 nC @ 4.5 V nC
Mounting Type:
Surface Mount
Channel Mode:
Depletion
Maximum Power Dissipation:
2.5 W
Maximum Gate Source Voltage:
±12 V
Maximum Gate Threshold Voltage:
1.3V
Height:
0.17mm
Width:
2.13mm
Length:
3.23mm
Package Type:
WLCSP
Number of Elements per Chip:
2
Maximum Continuous Drain Current:
25 A
Minimum Gate Threshold Voltage:
0.4V
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
10
Transistor Configuration:
Dual
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-
Package / Case:
10-SMD, No Lead
Rds On (Max) @ Id, Vgs:
-
Gate Charge (Qg) (Max) @ Vgs:
49nC @ 4.5V
Vgs(th) (Max) @ Id:
-
REACH Status:
REACH Unaffected
Current - Continuous Drain (Id) @ 25°C:
25A
Configuration:
2 N-Channel (Dual) Common Drain
Manufacturer:
onsemi
Drain to Source Voltage (Vdss):
24V
Moisture Sensitivity Level (MSL):
Not Applicable
Input Capacitance (Ciss) (Max) @ Vds:
-
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
10-WLCSP (3.2x2.1)
Packaging:
Tape & Reel (TR)
Power - Max:
2.5W
Technology:
MOSFET (Metal Oxide)
Base Product Number:
EFC4K110
ECCN:
EAR99
