Maximum Continuous Drain Current:
130 mA
Width:
1.4mm
Automotive Standard:
AEC-Q101
Transistor Configuration:
Single
Maximum Drain Source Voltage:
50 V
Maximum Gate Threshold Voltage:
2V
Package Type:
SOT-23
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.9V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
2.2 nC @ 10 V
Channel Type:
P
Length:
3.04mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
225 mW
Maximum Gate Source Voltage:
±20 V
Height:
1.01mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
2.2V
Maximum Drain Source Resistance:
10 Ω
FET Feature:
-
HTSUS:
8541.21.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Rds On (Max) @ Id, Vgs:
10Ohm @ 100mA, 5V
Gate Charge (Qg) (Max) @ Vgs:
2.2 nC @ 10 V
Vgs(th) (Max) @ Id:
2V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
BVSS84LT1G Models
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
5V
edacadModelUrl:
/en/models/3062044
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
50 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
225mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
36 pF @ 5 V
Qualification:
AEC-Q101
standardLeadTime:
38 Weeks
Mounting Type:
Surface Mount
Grade:
Automotive
Series:
-
Supplier Device Package:
SOT-23-3 (TO-236)
Current - Continuous Drain (Id) @ 25°C:
130mA (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
BVSS84
ECCN:
EAR99
