Maximum Drain Source Voltage:
50 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
75 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
16.51mm
Width:
4.83mm
Length:
10.67mm
Minimum Gate Threshold Voltage:
2.1V
Package Type:
TO-220AB
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
30 A
Transistor Material:
Si
Maximum Drain Source Resistance:
40 mΩ
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3
Rds On (Max) @ Id, Vgs:
40mOhm @ 15A, 10V
title:
BUZ11-NR4941
Vgs(th) (Max) @ Id:
4V @ 1mA
REACH Status:
REACH Unaffected
edacadModel:
BUZ11-NR4941 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/1954150
Drain to Source Voltage (Vdss):
50 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
Not Applicable
Power Dissipation (Max):
75W (Tc)
standardLeadTime:
19 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
2000 pF @ 25 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220-3
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
30A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
BUZ11
ECCN:
EAR99
