STMicroelectronics SCTL35N65G2V

SCTL35N65G2V STMicroelectronics
SCTL35N65G2V
STMicroelectronics

Product Information

Maximum Drain Source Voltage:
650 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
SCTL35N65G2V
Channel Type:
N
Maximum Gate Threshold Voltage:
5V
Maximum Drain Source Resistance:
0.067 O
Package Type:
PowerFLAT 8 x 8 HV
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
40 A
Transistor Material:
SiC
Pin Count:
5
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
5V @ 1mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
8-PowerVDFN
Rds On (Max) @ Id, Vgs:
67mOhm @ 20A, 20V
Gate Charge (Qg) (Max) @ Vgs:
73 nC @ 20 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
SCTL35N65G2V Models
FET Type:
N-Channel
edacadModelUrl:
/en/models/13592624
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
+22V, -10V
Moisture Sensitivity Level (MSL):
3 (168 Hours)
Power Dissipation (Max):
417W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1370 pF @ 400 V
standardLeadTime:
52 Weeks
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
PowerFlat™ (8x8) HV
Current - Continuous Drain (Id) @ 25°C:
40A (Tc)
Technology:
SiCFET (Silicon Carbide)
Base Product Number:
SCTL35
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is manufactured by STMicroelectronics. The manufacturer part number is SCTL35N65G2V. It has a maximum of 650 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product sctl35n65g2v, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 5v of maximum gate threshold voltage. It provides up to 0.067 o maximum drain source resistance. The package is a sort of powerflat 8 x 8 hv. It consists of 1 elements per chip. While 40 a of maximum continuous drain current. The transistor is manufactured from highly durable sic material. It contains 5 pins. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 5v @ 1ma. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in 8-powervdfn. It has a maximum Rds On and voltage of 67mohm @ 20a, 20v. The maximum gate charge and given voltages include 73 nc @ 20 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. It is shipped in tape & reel (tr) package . The product has a 650 v drain to source voltage. The maximum Vgs rate is +22v, -10v. Its typical moisture sensitivity level is 3 (168 hours). The product carries maximum power dissipation 417w (tc). The product's input capacitance at maximum includes 1370 pf @ 400 v. It has a long 52 weeks standard lead time. powerflat™ (8x8) hv is the supplier device package value. The continuous current drain at 25°C is 40a (tc). This product use sicfet (silicon carbide) technology. Moreover, it corresponds to sctl35, a base product number of the product. The product is designated with the ear99 code number.

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Datasheet - SCTL35N65G2V(Technical Reference)
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SCTL35N65G2V(Datasheets)

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