Maximum Drain Source Voltage:
60 V
Typical Gate Charge @ Vgs:
1.1 nC @ 10 V, 1.6 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
960 mW
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1mm
Width:
1.7mm
Length:
3mm
Minimum Gate Threshold Voltage:
1V
Package Type:
SOT-23
Number of Elements per Chip:
2
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
340 mA, 510 mA
Transistor Material:
Si
Maximum Drain Source Resistance:
4 Ω, 10 Ω
Channel Type:
N, P
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Transistor Configuration:
Isolated
FET Feature:
Logic Level Gate
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SOT-23-6 Thin, TSOT-23-6
Rds On (Max) @ Id, Vgs:
2Ohm @ 510mA, 10V
Gate Charge (Qg) (Max) @ Vgs:
1.5nC @ 10V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
NDC7001C Models
Current - Continuous Drain (Id) @ 25°C:
510mA, 340mA
edacadModelUrl:
/en/models/244207
Configuration:
N and P-Channel
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
60V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
20pF @ 25V, 66pF @ 25V
standardLeadTime:
14 Weeks
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SuperSOT™-6
Power - Max:
700mW
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NDC7001
ECCN:
EAR99
