Maximum Continuous Drain Current:
50 A
Width:
5.9mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
40 V
Maximum Gate Threshold Voltage:
3V
Package Type:
PQFN8
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
28 nC @ 10 V
Channel Type:
P
Length:
5.1mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
75 W
Maximum Gate Source Voltage:
±16 V
Height:
1.1mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.25V
Maximum Drain Source Resistance:
13.5 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
8-PowerTDFN
Rds On (Max) @ Id, Vgs:
13.5mOhm @ 50A, 10V
title:
FDWS9510L-F085
Vgs(th) (Max) @ Id:
3V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
FDWS9510L-F085 Models
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
edacadModelUrl:
/en/models/8636385
Drain to Source Voltage (Vdss):
40 V
Vgs (Max):
±16V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
75W (Tj)
Input Capacitance (Ciss) (Max) @ Vds:
2320 pF @ 20 V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Gate Charge (Qg) (Max) @ Vgs:
37 nC @ 10 V
Supplier Device Package:
8-DFN (5.1x6.3)
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
50A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDWS9510
ECCN:
EAR99
