Maximum Continuous Drain Current:
22 A, 30 A
Transistor Material:
Si
Width:
6mm
Transistor Configuration:
Series
Maximum Drain Source Voltage:
30 V
Package Type:
PQFN8
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
1.2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
18 nC @ 10 V, 21 nC @ 10 V
Channel Type:
N
Length:
5mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
2.2 W, 2.5 W
Series:
PowerTrench
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
0.725mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
8.6 mΩ, 13.9 mΩ
FET Feature:
Logic Level Gate
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerWDFN
Rds On (Max) @ Id, Vgs:
10mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs:
24nC @ 10V
Vgs(th) (Max) @ Id:
3V @ 250µA
REACH Status:
REACH Unaffected
Current - Continuous Drain (Id) @ 25°C:
12A, 15A
Configuration:
2 N-Channel (Dual)
Manufacturer:
onsemi
Drain to Source Voltage (Vdss):
30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
16 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
1510pF @ 15V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
Power56
Packaging:
Tape & Reel (TR)
Power - Max:
1W
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDMS7608
ECCN:
EAR99
