N-Channel MOSFET, 40 A, 150 V, 8-Pin Power 56 onsemi FDMS86200DC
Product Information
Maximum Continuous Drain Current:
40 A
Transistor Material:
Si
Width:
5.85mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
150 V
Package Type:
PQFN8
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
30 nC @ 10 V
Channel Type:
N
Length:
5.1mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
125 W
Series:
PowerTrench
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
35 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN
Rds On (Max) @ Id, Vgs:
17mOhm @ 9.3A, 10V
Gate Charge (Qg) (Max) @ Vgs:
42 nC @ 10 V
Vgs(th) (Max) @ Id:
4V @ 250µA
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Drain to Source Voltage (Vdss):
150 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
3.2W (Ta), 125W (Tc)
standardLeadTime:
20 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
2955 pF @ 75 V
Mounting Type:
Surface Mount
Series:
Dual Cool™, PowerTrench®
Supplier Device Package:
8-PQFN (5x6)
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
9.3A (Ta), 28A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDMS86200
ECCN:
EAR99
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FAQs
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You will get a confirmation email regarding your order of N-Channel MOSFET, 40 A, 150 V, 8-Pin Power 56 onsemi FDMS86200DC. You can also check on our website or by contacting our customer support team for further order details on N-Channel MOSFET, 40 A, 150 V, 8-Pin Power 56 onsemi FDMS86200DC.
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Yes. We ship FDMS86200DC Internationally to many countries around the world.
This is N-Channel MOSFET 40 A 150 V 8-Pin Power 56 manufactured by onsemi. The manufacturer part number is FDMS86200DC. While 40 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 5.85mm wide. The product offers single transistor configuration. It has a maximum of 150 v drain source voltage. The package is a sort of pqfn8. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 30 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 5.1mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 125 w maximum power dissipation. The product powertrench, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 35 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-powertdfn. It has a maximum Rds On and voltage of 17mohm @ 9.3a, 10v. The maximum gate charge and given voltages include 42 nc @ 10 v. The typical Vgs (th) (max) of the product is 4v @ 250µa. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 6v, 10v. The product has a 150 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 3.2w (ta), 125w (tc). It has a long 20 weeks standard lead time. The product's input capacitance at maximum includes 2955 pf @ 75 v. The product dual cool™, powertrench®, is a highly preferred choice for users. 8-pqfn (5x6) is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 9.3a (ta), 28a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to fdms86200, a base product number of the product. The product is designated with the ear99 code number.
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