Maximum Continuous Drain Current:
8.8 A
Transistor Material:
Si
Width:
3.9mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Package Type:
SOIC
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
17 nC @ 5 V
Channel Type:
P
Length:
4.9mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
2.5 W
Series:
PowerTrench
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.57mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
35 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
3V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs:
20mOhm @ 8.8A, 10V
Gate Charge (Qg) (Max) @ Vgs:
24 nC @ 5 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
SI4435DY Models
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
edacadModelUrl:
/en/models/965468
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
2.5W (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
1604 pF @ 15 V
standardLeadTime:
26 Weeks
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
8-SOIC
Current - Continuous Drain (Id) @ 25°C:
8.8A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SI4435
ECCN:
EAR99
