Maximum Continuous Drain Current:
4.5 A, 6.4 A
Transistor Material:
Si
Width:
3.9mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
30 V
Package Type:
SOIC
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
14 nC @ 10 V, 8.3 nC @ 10 V
Channel Type:
N, P
Length:
4.9mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
1.6 W, 2 W
Series:
PowerTrench
Maximum Gate Source Voltage:
-25 V, -20 V, +20 V, +25 V
Height:
1.575mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
39 mΩ, 80 mΩ
FET Feature:
Logic Level Gate
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
3V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs:
26mOhm @ 6.4A, 10V
edacadModel:
FDS8958B Models
Gate Charge (Qg) (Max) @ Vgs:
12nC @ 10V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
Current - Continuous Drain (Id) @ 25°C:
6.4A, 4.5A
edacadModelUrl:
/en/models/1991803
Configuration:
N and P-Channel
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
540pF @ 15V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
8-SOIC
Power - Max:
900mW
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDS89
ECCN:
EAR99
This is Dual N/P-Channel-Channel MOSFET 4.5 A 6.4 A 30 V 8-Pin SOIC manufactured by onsemi. The manufacturer part number is FDS8958B. While 4.5 a, 6.4 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 3.9mm wide. The product offers isolated transistor configuration. It has a maximum of 30 v drain source voltage. The package is a sort of soic. It consists of 2 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 14 nc @ 10 v, 8.3 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 4.9mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 1.6 w, 2 w maximum power dissipation. The product powertrench, is a highly preferred choice for users. It features a maximum gate source voltage of -25 v, -20 v, +20 v, +25 v. In addition, the height is 1.575mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 39 mω, 80 mω maximum drain source resistance. The FET features of the product include logic level gate. It is assigned with possible HTSUS value of 8541.21.0095. The typical Vgs (th) (max) of the product is 3v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-soic (0.154", 3.90mm width). It has a maximum Rds On and voltage of 26mohm @ 6.4a, 10v. The maximum gate charge and given voltages include 12nc @ 10v. The product is rohs3 compliant. In addition, it is reach unaffected. The continuous current drain at 25°C is 6.4a, 4.5a. The product is available in n and p-channel configuration. It is shipped in tape & reel (tr) package . The product has a 30v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 540pf @ 15v. The product powertrench®, is a highly preferred choice for users. 8-soic is the supplier device package value. The maximum power of the product is 900mw. This product use mosfet (metal oxide) technology. Moreover, it corresponds to fds89, a base product number of the product. The product is designated with the ear99 code number.
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