N-Channel MOSFET, 18 A, 60 V, 3-Pin DPAK onsemi RFD12N06RLESM9A

RFD12N06RLESM9A N-Channel MOSFET, 18 A, 60 V, 3-Pin DPAK onsemi
RFD12N06RLESM9A
RFD12N06RLESM9A
ET21470966
onsemi

Product Information

Maximum Continuous Drain Current:
18 A
Transistor Material:
Si
Width:
6.22mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
12 nC @ 10 V
Channel Type:
N
Length:
6.73mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
49 W
Series:
UltraFET
Maximum Gate Source Voltage:
-16 V, +16 V
Height:
2.39mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
75 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Rds On (Max) @ Id, Vgs:
63mOhm @ 18A, 10V
Gate Charge (Qg) (Max) @ Vgs:
15 nC @ 10 V
Vgs(th) (Max) @ Id:
3V @ 250µA
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±16V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
49W (Tc)
standardLeadTime:
31 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
485 pF @ 25 V
Mounting Type:
Surface Mount
Series:
UltraFET™
Supplier Device Package:
TO-252AA
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
18A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
RFD12N06
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is N-Channel MOSFET 18 A 60 V 3-Pin DPAK manufactured by onsemi. The manufacturer part number is RFD12N06RLESM9A. While 18 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 6.22mm wide. The product offers single transistor configuration. It has a maximum of 60 v drain source voltage. The package is a sort of dpak (to-252). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 12 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 6.73mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 49 w maximum power dissipation. The product ultrafet, is a highly preferred choice for users. It features a maximum gate source voltage of -16 v, +16 v. In addition, the height is 2.39mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 75 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. It has a maximum Rds On and voltage of 63mohm @ 18a, 10v. The maximum gate charge and given voltages include 15 nc @ 10 v. The typical Vgs (th) (max) of the product is 3v @ 250µa. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The product has a 60 v drain to source voltage. The maximum Vgs rate is ±16v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 49w (tc). It has a long 31 weeks standard lead time. The product's input capacitance at maximum includes 485 pf @ 25 v. The product ultrafet™, is a highly preferred choice for users. to-252aa is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 18a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to rfd12n06, a base product number of the product. The product is designated with the ear99 code number.

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RFD12N06RLESM, N-Channel UltraFET Power MOSFET 60V 17A 71mOhm Data Sheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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Mult PN Mold/Source 01/Dec/2023(PCN Assembly/Origin)
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RFD12N06RLESM(Datasheets)
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onsemi RoHS(Environmental Information)
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onsemi REACH(Environmental Information)
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Description Chg 01/Apr/2016(PCN Design/Specification)
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Logo 17/Aug/2017(PCN Design/Specification)
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Mult Devices 24/Oct/2017(PCN Packaging)
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Tape and Box/Reel Barcode Update 07/Aug/2014(PCN Packaging)

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