Dual P-Channel MOSFET, 1.9 A, 20 V, 6-Pin SOT-23 onsemi FDC6306P

FDC6306P Dual P-Channel MOSFET, 1.9 A, 20 V, 6-Pin SOT-23 onsemi
onsemi

Product Information

Maximum Continuous Drain Current:
1.9 A
Transistor Material:
Si
Width:
1.7mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
20 V
Package Type:
SOT-23
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
0.4V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
3 nC @ 4.5 V
Channel Type:
P
Length:
3mm
Pin Count:
6
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
960 mW
Series:
PowerTrench
Maximum Gate Source Voltage:
-8 V, +8 V
Height:
1mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
270 mΩ
FET Feature:
Logic Level Gate
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SOT-23-6 Thin, TSOT-23-6
Rds On (Max) @ Id, Vgs:
170mOhm @ 1.9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs:
4.2nC @ 4.5V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
FDC6306P Models
Current - Continuous Drain (Id) @ 25°C:
1.9A
edacadModelUrl:
/en/models/965282
Configuration:
2 P-Channel (Dual)
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
441pF @ 10V
standardLeadTime:
19 Weeks
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
SuperSOT™-6
Power - Max:
700mW
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDC6306
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is Dual P-Channel MOSFET 1.9 A 20 V 6-Pin SOT-23 manufactured by onsemi. The manufacturer part number is FDC6306P. While 1.9 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 1.7mm wide. The product offers isolated transistor configuration. It has a maximum of 20 v drain source voltage. The package is a sort of sot-23. It consists of 2 elements per chip. Whereas its minimum gate threshold voltage includes 0.4v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 3 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its accurate length is 3mm. It contains 6 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 960 mw maximum power dissipation. The product powertrench, is a highly preferred choice for users. It features a maximum gate source voltage of -8 v, +8 v. In addition, the height is 1mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 270 mω maximum drain source resistance. The FET features of the product include logic level gate. It is assigned with possible HTSUS value of 8541.21.0095. The typical Vgs (th) (max) of the product is 1.5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in sot-23-6 thin, tsot-23-6. It has a maximum Rds On and voltage of 170mohm @ 1.9a, 4.5v. The maximum gate charge and given voltages include 4.2nc @ 4.5v. The product is rohs3 compliant. In addition, it is reach unaffected. The continuous current drain at 25°C is 1.9a. The product is available in 2 p-channel (dual) configuration. It is shipped in tape & reel (tr) package . The product has a 20v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 441pf @ 10v. It has a long 19 weeks standard lead time. The product powertrench®, is a highly preferred choice for users. supersot™-6 is the supplier device package value. The maximum power of the product is 700mw. This product use mosfet (metal oxide) technology. Moreover, it corresponds to fdc6306, a base product number of the product. The product is designated with the ear99 code number.

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FDC6306P, Dual P-Channel 2.5V Specified PowerTrench™ MOSFET(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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onsemi RoHS(Environmental Information)
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onsemi REACH(Environmental Information)
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Mult Dev Assembly Chgs 21/Dec/2020(PCN Assembly/Origin)
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Marking Change 07/Oct/2022(PCN Design/Specification)
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Marking Change 17/Nov/2021(PCN Design/Specification)
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Mult Dev EOL 24/Dec/2021(PCN Obsolescence/ EOL)
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Mult Dev Retraction 14/Jan/2022(PCN Obsolescence/ EOL)
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FDC6306P(Datasheets)
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Marking Change 07/Oct/2022(PCN Packaging)
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Mult Devices 24/Oct/2017(PCN Packaging)

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