Maximum Continuous Drain Current:
3.4 A
Transistor Material:
Si
Width:
6.22mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
600 V
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
8.3 nC @ 10 V
Channel Type:
N
Length:
6.73mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
114 W
Series:
UniFET
Maximum Gate Source Voltage:
-25 V, +25 V
Height:
2.39mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
2.5 Ω
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Rds On (Max) @ Id, Vgs:
2.5Ohm @ 1.7A, 10V
Gate Charge (Qg) (Max) @ Vgs:
10.8 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±25V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
114W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
510 pF @ 25 V
Mounting Type:
Surface Mount
Series:
UniFET-II™
Supplier Device Package:
TO-252AA
Current - Continuous Drain (Id) @ 25°C:
3.4A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDD4N60
ECCN:
EAR99
