Maximum Continuous Drain Current:
340 mA
Transistor Material:
Si
Width:
1.7mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
60 V
Package Type:
SOT-23
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
1.6 nC @ 10 V
Channel Type:
P
Length:
3mm
Pin Count:
6
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
960 mW
Series:
PowerTrench
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
10 Ω
FET Feature:
Logic Level Gate
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
3.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SOT-23-6 Thin, TSOT-23-6
Rds On (Max) @ Id, Vgs:
5Ohm @ 340mA, 10V
Gate Charge (Qg) (Max) @ Vgs:
2.2nC @ 10V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
Current - Continuous Drain (Id) @ 25°C:
340mA
Configuration:
2 P-Channel (Dual)
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
60V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
66pF @ 25V
standardLeadTime:
11 Weeks
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
SuperSOT™-6
Power - Max:
700mW
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NDC7003
ECCN:
EAR99
