P-Channel MOSFET, 6.6 A, 100 V, 3-Pin DPAK onsemi FQD8P10TM

FQD8P10TM P-Channel MOSFET, 6.6 A, 100 V, 3-Pin DPAK onsemi
FQD8P10TM
FQD8P10TM
ET21470663
onsemi

Product Information

Maximum Drain Source Voltage:
100 V
Typical Gate Charge @ Vgs:
12 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.5 W
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
2.3mm
Width:
6.1mm
Length:
6.6mm
Minimum Gate Threshold Voltage:
2V
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
6.6 A
Transistor Material:
Si
Maximum Drain Source Resistance:
530 mΩ
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Rds On (Max) @ Id, Vgs:
530mOhm @ 3.3A, 10V
Gate Charge (Qg) (Max) @ Vgs:
15 nC @ 10 V
Vgs(th) (Max) @ Id:
4V @ 250µA
REACH Status:
REACH Unaffected
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
2.5W (Ta), 44W (Tc)
standardLeadTime:
34 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
470 pF @ 25 V
Mounting Type:
Surface Mount
Series:
QFET®
Supplier Device Package:
TO-252AA
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
6.6A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FQD8P10
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is P-Channel MOSFET 6.6 A 100 V 3-Pin DPAK manufactured by onsemi. The manufacturer part number is FQD8P10TM. It has a maximum of 100 v drain source voltage. With a typical gate charge at Vgs includes 12 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 2.5 w maximum power dissipation. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 2.3mm. Furthermore, the product is 6.1mm wide. Its accurate length is 6.6mm. Whereas its minimum gate threshold voltage includes 2v. The package is a sort of dpak (to-252). It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 6.6 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 530 mω maximum drain source resistance. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. It has a maximum Rds On and voltage of 530mohm @ 3.3a, 10v. The maximum gate charge and given voltages include 15 nc @ 10 v. The typical Vgs (th) (max) of the product is 4v @ 250µa. In addition, it is reach unaffected. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 100 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 2.5w (ta), 44w (tc). It has a long 34 weeks standard lead time. The product's input capacitance at maximum includes 470 pf @ 25 v. The product qfet®, is a highly preferred choice for users. to-252aa is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 6.6a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to fqd8p10, a base product number of the product. The product is designated with the ear99 code number.

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Product Change Notification(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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Trans MOSFET P-CH 100V 6.6A 3-Pin DPAK(Technical Reference)
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Mult Dev Assembly 13/Jun/2024(PCN Assembly/Origin)
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FQD8P10, FQU8P10(Datasheets)
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onsemi RoHS(Environmental Information)
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Logo 17/Aug/2017(PCN Design/Specification)
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Postponed Qualification 27/Dec/2022(PCN Design/Specification)
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Mult Devices 24/Oct/2017(PCN Packaging)
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Tape and Box/Reel Barcode Update 07/Aug/2014(PCN Packaging)

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FAQs

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You will get a confirmation email regarding your order of P-Channel MOSFET, 6.6 A, 100 V, 3-Pin DPAK onsemi FQD8P10TM. You can also check on our website or by contacting our customer support team for further order details on P-Channel MOSFET, 6.6 A, 100 V, 3-Pin DPAK onsemi FQD8P10TM.
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