Maximum Continuous Drain Current:
2.6 A, 3.8 A
Transistor Material:
Si
Width:
1.6mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
20 V
Package Type:
MicroFET Thin
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
0.4V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
3 nC @ 4.5 V, 5.5 nC @ 4.5 V
Channel Type:
N, P
Length:
1.6mm
Pin Count:
6
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
1.4 W
Series:
PowerTrench
Maximum Gate Source Voltage:
-8 V, +8 V
Height:
0.5mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
160 mΩ, 530 mΩ
FET Feature:
Logic Level Gate
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
1V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
6-UFDFN Exposed Pad
Rds On (Max) @ Id, Vgs:
66mOhm @ 3.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs:
4.2nC @ 4.5V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
FDME1034CZT Models
Current - Continuous Drain (Id) @ 25°C:
3.8A, 2.6A
edacadModelUrl:
/en/models/2509608
Configuration:
N and P-Channel
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
300pF @ 10V
standardLeadTime:
21 Weeks
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
6-MicroFET (1.6x1.6)
Power - Max:
600mW
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDME1034
ECCN:
EAR99
