Maximum Continuous Drain Current:
2.2 A, 3 A
Transistor Material:
Si
Width:
1.7mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
20 V
Package Type:
SSOT-6
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
0.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
3.3 nC @ 4.5 V, 3.7 nC @ 4.5 V
Channel Type:
N, P
Length:
3mm
Pin Count:
6
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
960 mW
Series:
PowerTrench
Maximum Gate Source Voltage:
-12 V, +12 V
Height:
1mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
106 mΩ, 190 mΩ
FET Feature:
Logic Level Gate
HTSUS:
8541.21.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SOT-23-6 Thin, TSOT-23-6
Rds On (Max) @ Id, Vgs:
70mOhm @ 3A, 4.5V
title:
FDC6420C
Vgs(th) (Max) @ Id:
1.5V @ 250µA
REACH Status:
REACH Unaffected
Current - Continuous Drain (Id) @ 25°C:
3A, 2.2A
Configuration:
N and P-Channel
Manufacturer:
onsemi
Drain to Source Voltage (Vdss):
20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
16 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
324pF @ 10V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Gate Charge (Qg) (Max) @ Vgs:
4.6nC @ 4.5V
Supplier Device Package:
SuperSOT™-6
Packaging:
Tape & Reel (TR)
Power - Max:
700mW
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDC6420
ECCN:
EAR99
