Maximum Continuous Drain Current:
169 A
Transistor Material:
Si
Width:
9.9mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
150 V
Maximum Gate Threshold Voltage:
4V
Package Type:
PSOF
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
70 nC @ 10 V
Channel Type:
N
Length:
10.48mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
500 W
Series:
PowerTrench
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
2.4mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
17.5 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
8-PowerSFN
Rds On (Max) @ Id, Vgs:
6.3mOhm @ 80A, 10V
Gate Charge (Qg) (Max) @ Vgs:
90 nC @ 10 V
Vgs(th) (Max) @ Id:
4V @ 250µA
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Drain to Source Voltage (Vdss):
150 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
500W (Tj)
Qualification:
AEC-Q101
standardLeadTime:
26 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
5805 pF @ 75 V
Mounting Type:
Surface Mount
Grade:
Automotive
Series:
PowerTrench®
Supplier Device Package:
8-HPSOF
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
169A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDBL86210
ECCN:
EAR99
