Maximum Continuous Drain Current:
130 A
Transistor Material:
Si
Width:
6.25mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
80 V
Package Type:
PQFN8
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
110 nC @ 10 V
Channel Type:
N
Length:
5.1mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
156 W
Series:
PowerTrench
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.05mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
3.8 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN
Rds On (Max) @ Id, Vgs:
2.4mOhm @ 25A, 10V
title:
FDMS86350
Vgs(th) (Max) @ Id:
4.5V @ 250µA
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
8V, 10V
Drain to Source Voltage (Vdss):
80 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
2.7W (Ta), 156W (Tc)
standardLeadTime:
13 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
10680 pF @ 40 V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Gate Charge (Qg) (Max) @ Vgs:
155 nC @ 10 V
Supplier Device Package:
8-PQFN (5x6)
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
25A (Ta), 130A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDMS86
ECCN:
EAR99
