N-Channel MOSFET, 9 A, 500 V, 3-Pin D2PAK onsemi FQB9N50CTM

FQB9N50CTM N-Channel MOSFET, 9 A, 500 V, 3-Pin D2PAK onsemi
FQB9N50CTM
FQB9N50CTM
onsemi

Product Information

Maximum Continuous Drain Current:
9 A
Transistor Material:
Si
Width:
9.65mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
500 V
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
28 nC @ 10 V
Channel Type:
N
Length:
10.67mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
135 W
Series:
QFET
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
4.83mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
800 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Rds On (Max) @ Id, Vgs:
800mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs:
35 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
500 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
135W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1030 pF @ 25 V
Mounting Type:
Surface Mount
Series:
QFET®
Supplier Device Package:
TO-263 (D2PAK)
Current - Continuous Drain (Id) @ 25°C:
9A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FQB9N50
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is N-Channel MOSFET 9 A 500 V 3-Pin D2PAK manufactured by onsemi. The manufacturer part number is FQB9N50CTM. While 9 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 9.65mm wide. The product offers single transistor configuration. It has a maximum of 500 v drain source voltage. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 28 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.67mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 135 w maximum power dissipation. The product qfet, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 4.83mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 800 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-263-3, d2pak (2 leads + tab), to-263ab. It has a maximum Rds On and voltage of 800mohm @ 4.5a, 10v. The maximum gate charge and given voltages include 35 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tape & reel (tr) package . The product has a 500 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 135w (tc). The product's input capacitance at maximum includes 1030 pf @ 25 v. The product qfet®, is a highly preferred choice for users. to-263 (d2pak) is the supplier device package value. The continuous current drain at 25°C is 9a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to fqb9n50, a base product number of the product. The product is designated with the ear99 code number.

pdf icon
Trans MOSFET N-CH 500V 9A 3-Pin D2PAK(Technical Reference)
pdf icon
ESD Control Selection Guide V1(Technical Reference)
pdf icon
onsemi RoHS(Environmental Information)
pdf icon
Mult Dev Assembly Chgs 21/Dec/2020(PCN Assembly/Origin)
pdf icon
Description Chg 01/Apr/2016(PCN Design/Specification)
pdf icon
Passivation Material 14/May/2008(PCN Design/Specification)
pdf icon
Mult Dev EOL 23/Dec/2021(PCN Obsolescence/ EOL)
pdf icon
FQB9N50C(Datasheets)
pdf icon
Mult Dev Box Chgs 1/Jul/2021(PCN Packaging)
pdf icon
Mult Devices 24/Oct/2017(PCN Packaging)

Reviews

  • Be the first to review.


FAQs

Yes. You can also search FQB9N50CTM on website for other similar products.
We accept all major payment methods for all products including ET21470153. Please check your shopping cart at the time of order.
You can order onsemi brand products with FQB9N50CTM directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of N-Channel MOSFET, 9 A, 500 V, 3-Pin D2PAK onsemi FQB9N50CTM. You can also check on our website or by contacting our customer support team for further order details on N-Channel MOSFET, 9 A, 500 V, 3-Pin D2PAK onsemi FQB9N50CTM.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET21470153 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "onsemi" products on our website by using Enrgtech's Unique Manufacturing Part Number ET21470153.
Yes. We ship FQB9N50CTM Internationally to many countries around the world.