N-Channel MOSFET, 9 A, 500 V, 3-Pin D2PAK onsemi FQB9N50CTM

FQB9N50CTM N-Channel MOSFET, 9 A, 500 V, 3-Pin D2PAK onsemi
FQB9N50CTM
FQB9N50CTM
onsemi

Product Information

Maximum Continuous Drain Current:
9 A
Transistor Material:
Si
Width:
9.65mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
500 V
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
28 nC @ 10 V
Channel Type:
N
Length:
10.67mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
135 W
Series:
QFET
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
4.83mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
800 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Rds On (Max) @ Id, Vgs:
800mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs:
35 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
500 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
135W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1030 pF @ 25 V
Mounting Type:
Surface Mount
Series:
QFET®
Supplier Device Package:
TO-263 (D2PAK)
Current - Continuous Drain (Id) @ 25°C:
9A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FQB9N50
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is N-Channel MOSFET 9 A 500 V 3-Pin D2PAK manufactured by onsemi. The manufacturer part number is FQB9N50CTM. While 9 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 9.65mm wide. The product offers single transistor configuration. It has a maximum of 500 v drain source voltage. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 28 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.67mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 135 w maximum power dissipation. The product qfet, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 4.83mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 800 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-263-3, d2pak (2 leads + tab), to-263ab. It has a maximum Rds On and voltage of 800mohm @ 4.5a, 10v. The maximum gate charge and given voltages include 35 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tape & reel (tr) package . The product has a 500 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 135w (tc). The product's input capacitance at maximum includes 1030 pf @ 25 v. The product qfet®, is a highly preferred choice for users. to-263 (d2pak) is the supplier device package value. The continuous current drain at 25°C is 9a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to fqb9n50, a base product number of the product. The product is designated with the ear99 code number.

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Trans MOSFET N-CH 500V 9A 3-Pin D2PAK(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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onsemi RoHS(Environmental Information)
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Mult Dev Assembly Chgs 21/Dec/2020(PCN Assembly/Origin)
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Description Chg 01/Apr/2016(PCN Design/Specification)
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Passivation Material 14/May/2008(PCN Design/Specification)
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Mult Dev EOL 23/Dec/2021(PCN Obsolescence/ EOL)
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FQB9N50C(Datasheets)
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Mult Dev Box Chgs 1/Jul/2021(PCN Packaging)
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Mult Devices 24/Oct/2017(PCN Packaging)

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