P-Channel MOSFET, 1 A, 20 V, 3-Pin SOT-23 onsemi NTR1P02T1G

NTR1P02T1G P-Channel MOSFET, 1 A, 20 V, 3-Pin SOT-23 onsemi
NTR1P02T1G
NTR1P02T1G
onsemi

Product Information

Maximum Drain Source Voltage:
20 V
Typical Gate Charge @ Vgs:
2.5 nC @ 5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
400 mW
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
2.3V
Height:
0.94mm
Width:
1.3mm
Length:
2.9mm
Maximum Drain Source Resistance:
180 mΩ
Package Type:
SOT-23
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
1 A
Transistor Material:
Si
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.21.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Rds On (Max) @ Id, Vgs:
180mOhm @ 1.5A, 10V
Gate Charge (Qg) (Max) @ Vgs:
2.5 nC @ 5 V
Vgs(th) (Max) @ Id:
2.3V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
NTR1P02T1G Models
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
edacadModelUrl:
/en/models/1749077
Drain to Source Voltage (Vdss):
20 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
400mW (Ta)
standardLeadTime:
19 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
165 pF @ 5 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SOT-23-3 (TO-236)
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
1A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NTR1P02
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is P-Channel MOSFET 1 A 20 V 3-Pin SOT-23 manufactured by onsemi. The manufacturer part number is NTR1P02T1G. It has a maximum of 20 v drain source voltage. With a typical gate charge at Vgs includes 2.5 nc @ 5 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 400 mw maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. The product carries 2.3v of maximum gate threshold voltage. In addition, the height is 0.94mm. Furthermore, the product is 1.3mm wide. Its accurate length is 2.9mm. It provides up to 180 mω maximum drain source resistance. The package is a sort of sot-23. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 1 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. It is assigned with possible HTSUS value of 8541.21.0095. The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-236-3, sc-59, sot-23-3. It has a maximum Rds On and voltage of 180mohm @ 1.5a, 10v. The maximum gate charge and given voltages include 2.5 nc @ 5 v. The typical Vgs (th) (max) of the product is 2.3v @ 250µa. In addition, it is reach unaffected. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The product has a 20 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 400mw (ta). It has a long 19 weeks standard lead time. The product's input capacitance at maximum includes 165 pf @ 5 v. sot-23-3 (to-236) is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 1a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to ntr1p02, a base product number of the product. The product is designated with the ear99 code number.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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onsemi RoHS(Environmental Information)
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onsemi REACH(Environmental Information)
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Mold Compound 07/Sep/2019(PCN Assembly/Origin)
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Copper Wire 26/May/2009(PCN Design/Specification)
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SOT23 16/Sep/2016(PCN Design/Specification)
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N(T,V)R1P02(Datasheets)

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