Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
28 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.3 W
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
2.5V
Height:
1.5mm
Width:
4mm
Length:
5mm
Maximum Drain Source Resistance:
9 mΩ
Package Type:
SOIC
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
11.6 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
8
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs:
9mOhm @ 12A, 10V
edacadModel:
NTMS4916NR2G Models
Gate Charge (Qg) (Max) @ Vgs:
15 nC @ 4.5 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
edacadModelUrl:
/en/models/2683876
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
890mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
1376 pF @ 25 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
8-SOIC
Current - Continuous Drain (Id) @ 25°C:
7.8A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NTMS4916
ECCN:
EAR99
