Maximum Drain Source Voltage:
20 V
Typical Gate Charge @ Vgs:
5.6 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
210 mW
Maximum Gate Source Voltage:
-8 V, +8 V
Maximum Gate Threshold Voltage:
1V
Height:
0.6mm
Width:
1.3mm
Length:
1.7mm
Maximum Drain Source Resistance:
240 mΩ
Package Type:
SOT-563
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
950 mA
Transistor Material:
Si
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.21.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SOT-563, SOT-666
Rds On (Max) @ Id, Vgs:
150mOhm @ 950mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs:
5.6 nC @ 4.5 V
Vgs(th) (Max) @ Id:
1V @ 250µA
REACH Status:
REACH Unaffected
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Drain to Source Voltage (Vdss):
20 V
Vgs (Max):
±8V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
170mW (Ta)
standardLeadTime:
18 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
458 pF @ 16 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SOT-563
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
860mA (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NTZS3151
ECCN:
EAR99
