Maximum Drain Source Voltage:
20 V
Typical Gate Charge @ Vgs:
1.7 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
280 mW
Maximum Gate Source Voltage:
-6 V, +6 V
Maximum Gate Threshold Voltage:
1V
Height:
0.6mm
Width:
1.3mm
Length:
1.7mm
Maximum Drain Source Resistance:
2 Ω
Package Type:
SOT-563
Number of Elements per Chip:
2
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
430 mA
Transistor Material:
Si
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Transistor Configuration:
Isolated
FET Feature:
-
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
1V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SOT-563, SOT-666
Rds On (Max) @ Id, Vgs:
900mOhm @ 430mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs:
2.5nC @ 4.5V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
NTZD3152PT1G Models
Current - Continuous Drain (Id) @ 25°C:
430mA
edacadModelUrl:
/en/models/687100
Configuration:
2 P-Channel (Dual)
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
175pF @ 16V
standardLeadTime:
29 Weeks
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SOT-563
Power - Max:
250mW
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NTZD3152
ECCN:
EAR99
