Maximum Drain Source Voltage:
25 V
Typical Gate Charge @ Vgs:
1.2 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
330 mW
Maximum Gate Source Voltage:
-8 V, +8 V
Maximum Gate Threshold Voltage:
1.5V
Height:
0.9mm
Width:
1.35mm
Length:
2.2mm
Maximum Drain Source Resistance:
400 mΩ
Package Type:
SOT-23
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
700 mA
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.21.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SC-70, SOT-323
Rds On (Max) @ Id, Vgs:
350mOhm @ 600mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs:
1.5 nC @ 4.5 V
Vgs(th) (Max) @ Id:
1.5V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
NTS4409NT1G Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.7V, 4.5V
edacadModelUrl:
/en/models/1484958
Drain to Source Voltage (Vdss):
25 V
Vgs (Max):
±8V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
280mW (Tj)
standardLeadTime:
19 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
60 pF @ 10 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SC-70-3 (SOT323)
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
700mA (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NTS4409
ECCN:
EAR99
