Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
10.1 nC @ 10 V, 4.8 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
350 mW
Maximum Gate Source Voltage:
-12 V, +12 V
Maximum Gate Threshold Voltage:
1.5V
Height:
0.9mm
Width:
1.35mm
Length:
2.2mm
Maximum Drain Source Resistance:
280 mΩ
Package Type:
SOT-323
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
1.3 A
Transistor Material:
Si
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.21.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SC-70, SOT-323
Rds On (Max) @ Id, Vgs:
150mOhm @ 1.2A, 10V
Gate Charge (Qg) (Max) @ Vgs:
10.1 nC @ 10 V
Vgs(th) (Max) @ Id:
1.5V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
NTS4173PT1G Models
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 10V
edacadModelUrl:
/en/models/2050560
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±12V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
290mW (Ta)
standardLeadTime:
18 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
430 pF @ 15 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SC-70-3 (SOT323)
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
1.2A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NTS4173
ECCN:
EAR99
