Maximum Drain Source Voltage:
20 V, 30 V
Typical Gate Charge @ Vgs:
0.9 nC @ 5 V, 2.2 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
270 mW
Maximum Gate Source Voltage:
-20 V, -12 V, +12 V, +20 V
Maximum Gate Threshold Voltage:
1.5V
Height:
1mm
Width:
1.35mm
Length:
2.2mm
Maximum Drain Source Resistance:
2.5 Ω, 500 mΩ
Package Type:
SOT-363
Number of Elements per Chip:
2
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
250 mA, 880 mA
Transistor Material:
Si
Channel Type:
N, P
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Transistor Configuration:
Isolated
FET Feature:
Logic Level Gate
HTSUS:
8541.21.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
6-TSSOP, SC-88, SOT-363
Rds On (Max) @ Id, Vgs:
1.5Ohm @ 10mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs:
1.5nC @ 5V
Vgs(th) (Max) @ Id:
1.5V @ 100µA
REACH Status:
REACH Unaffected
edacadModel:
NTJD4158CT1G Models
Current - Continuous Drain (Id) @ 25°C:
250mA, 880mA
edacadModelUrl:
/en/models/1484876
Configuration:
N and P-Channel
Manufacturer:
onsemi
Drain to Source Voltage (Vdss):
30V, 20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
18 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
33pF @ 5V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SC-88/SC70-6/SOT-363
Packaging:
Tape & Reel (TR)
Power - Max:
270mW
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NTJD4158
ECCN:
EAR99
