Maximum Drain Source Voltage:
20 V, 30 V
Typical Gate Charge @ Vgs:
0.9 nC @ 5 V, 2.2 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
270 mW
Maximum Gate Source Voltage:
-20 V, -12 V, +12 V, +20 V
Maximum Gate Threshold Voltage:
1.5V
Height:
1mm
Width:
1.35mm
Length:
2.2mm
Maximum Drain Source Resistance:
2.5 Ω, 500 mΩ
Package Type:
SOT-363
Number of Elements per Chip:
2
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
250 mA, 880 mA
Transistor Material:
Si
Channel Type:
N, P
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Transistor Configuration:
Isolated
FET Feature:
Logic Level Gate
HTSUS:
8541.21.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
6-TSSOP, SC-88, SOT-363
Rds On (Max) @ Id, Vgs:
1.5Ohm @ 10mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs:
1.5nC @ 5V
Vgs(th) (Max) @ Id:
1.5V @ 100µA
REACH Status:
REACH Unaffected
edacadModel:
NTJD4158CT1G Models
Current - Continuous Drain (Id) @ 25°C:
250mA, 880mA
edacadModelUrl:
/en/models/1484876
Configuration:
N and P-Channel
Manufacturer:
onsemi
Drain to Source Voltage (Vdss):
30V, 20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
18 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
33pF @ 5V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SC-88/SC70-6/SOT-363
Packaging:
Tape & Reel (TR)
Power - Max:
270mW
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NTJD4158
ECCN:
EAR99
This is Dual N/P-Channel MOSFET 250 mA 880 mA 20 V 30 V 6-Pin SOT-363 ON Semiconductor manufactured by onsemi. The manufacturer part number is NTJD4158CT1G. It has a maximum of 20 v, 30 v drain source voltage. With a typical gate charge at Vgs includes 0.9 nc @ 5 v, 2.2 nc @ 4.5 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 270 mw maximum power dissipation. It features a maximum gate source voltage of -20 v, -12 v, +12 v, +20 v. The product carries 1.5v of maximum gate threshold voltage. In addition, the height is 1mm. Furthermore, the product is 1.35mm wide. Its accurate length is 2.2mm. It provides up to 2.5 ω, 500 mω maximum drain source resistance. The package is a sort of sot-363. It consists of 2 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 250 ma, 880 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 6 pins. The product offers isolated transistor configuration. The FET features of the product include logic level gate. It is assigned with possible HTSUS value of 8541.21.0095. The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 6-tssop, sc-88, sot-363. It has a maximum Rds On and voltage of 1.5ohm @ 10ma, 4.5v. The maximum gate charge and given voltages include 1.5nc @ 5v. The typical Vgs (th) (max) of the product is 1.5v @ 100µa. In addition, it is reach unaffected. The continuous current drain at 25°C is 250ma, 880ma. The product is available in n and p-channel configuration. The onsemi's product offers user-desired applications. The product has a 30v, 20v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). It has a long 18 weeks standard lead time. The product's input capacitance at maximum includes 33pf @ 5v. sc-88/sc70-6/sot-363 is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The maximum power of the product is 270mw. This product use mosfet (metal oxide) technology. Moreover, it corresponds to ntjd4158, a base product number of the product. The product is designated with the ear99 code number.
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