Maximum Drain Source Voltage:
20 V
Typical Gate Charge @ Vgs:
2.6 nC @ 4.5 V, 3 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.1 W
Maximum Gate Source Voltage:
-12 V, +12 V
Maximum Gate Threshold Voltage:
1.2V
Height:
1.1mm
Width:
1.7mm
Length:
3.1mm
Maximum Drain Source Resistance:
115 mΩ, 240 mΩ
Package Type:
ChipFET
Number of Elements per Chip:
2
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
3 A, 3.9 A
Transistor Material:
Si
Channel Type:
N, P
Maximum Operating Temperature:
+150 °C
Pin Count:
8
Transistor Configuration:
Isolated
FET Feature:
Logic Level Gate
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
1.2V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-SMD, Flat Lead
Rds On (Max) @ Id, Vgs:
80mOhm @ 2.9A, 4.5V
edacadModel:
NTHC5513T1G Models
Gate Charge (Qg) (Max) @ Vgs:
4nC @ 4.5V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
Current - Continuous Drain (Id) @ 25°C:
2.9A, 2.2A
edacadModelUrl:
/en/models/661391
Configuration:
N and P-Channel
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
180pF @ 10V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
ChipFET™
Power - Max:
1.1W
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NTHC5513
ECCN:
EAR99
