N-Channel MOSFET, 4.8 A, 600 V, 3-Pin TO-220FP ON Semiconductor NDF04N60ZG
Product Information
Maximum Drain Source Voltage:
600 V
Typical Gate Charge @ Vgs:
19 nC @ 10 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
30 W
Maximum Gate Source Voltage:
-30 V, +30 V
Maximum Gate Threshold Voltage:
4.5V
Height:
16.12mm
Width:
4.9mm
Length:
10.63mm
Maximum Drain Source Resistance:
2 Ω
Package Type:
TO-220FP
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
4.8 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4.5V @ 50µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3 Full Pack
Gate Charge (Qg) (Max) @ Vgs:
29 nC @ 10 V
REACH Status:
REACH Unaffected
Rds On (Max) @ Id, Vgs:
2Ohm @ 2A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
30W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
640 pF @ 25 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220FP
Current - Continuous Drain (Id) @ 25°C:
4.8A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NDF04
ECCN:
EAR99
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This is N-Channel MOSFET 4.8 A 600 V 3-Pin TO-220FP ON Semiconductor manufactured by onsemi. The manufacturer part number is NDF04N60ZG. It has a maximum of 600 v drain source voltage. With a typical gate charge at Vgs includes 19 nc @ 10 v. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 30 w maximum power dissipation. It features a maximum gate source voltage of -30 v, +30 v. The product carries 4.5v of maximum gate threshold voltage. In addition, the height is 16.12mm. Furthermore, the product is 4.9mm wide. Its accurate length is 10.63mm. It provides up to 2 ω maximum drain source resistance. The package is a sort of to-220fp. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 4.8 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4.5v @ 50µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3 full pack. The maximum gate charge and given voltages include 29 nc @ 10 v. In addition, it is reach unaffected. It has a maximum Rds On and voltage of 2ohm @ 2a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tube package . The product has a 600 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 30w (tc). The product's input capacitance at maximum includes 640 pf @ 25 v. to-220fp is the supplier device package value. The continuous current drain at 25°C is 4.8a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to ndf04, a base product number of the product. The product is designated with the ear99 code number.
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