Maximum Drain Source Voltage:
20 V
Typical Gate Charge @ Vgs:
1.7 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1 W
Maximum Gate Source Voltage:
-10 V, +10 V
Maximum Gate Threshold Voltage:
1.4V
Height:
0.56mm
Width:
1.5mm
Length:
1.6mm
Maximum Drain Source Resistance:
241 mΩ
Package Type:
SCH
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
1.5 A
Transistor Material:
Si
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
1.4V @ 1mA
Operating Temperature:
150°C (TJ)
Package / Case:
SOT-563, SOT-666
Rds On (Max) @ Id, Vgs:
241mOhm @ 750mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs:
1.7 nC @ 4.5 V
REACH Status:
REACH Unaffected
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Drain to Source Voltage (Vdss):
20 V
Vgs (Max):
±10V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
1W (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
120 pF @ 10 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
6-SCH
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
1.5A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SCH133
ECCN:
EAR99
