Maximum Drain Source Voltage:
60 V
Typical Gate Charge @ Vgs:
49 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.5 W
Series:
PowerTrench
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.5mm
Width:
4mm
Length:
5mm
Maximum Drain Source Resistance:
14 mΩ
Package Type:
SOIC
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
10 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
8
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs:
14mOhm @ 10A, 10V
title:
FDS5670
Vgs(th) (Max) @ Id:
4V @ 250µA
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
2.5W (Ta)
standardLeadTime:
16 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
2900 pF @ 15 V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Gate Charge (Qg) (Max) @ Vgs:
70 nC @ 10 V
Supplier Device Package:
8-SOIC
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
10A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDS56
ECCN:
EAR99
