Maximum Continuous Drain Current:
950 mA
Transistor Material:
Si
Width:
1.25mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
25 V
Package Type:
SOT-363 (SC-70)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.65V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
1.64 nC @ 4.5 V
Channel Type:
N
Length:
2mm
Pin Count:
6
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
750 mW
Series:
PowerTrench
Maximum Gate Source Voltage:
-8 V, +8 V
Height:
1mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
760 mΩ
FET Feature:
-
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
6-TSSOP, SC-88, SOT-363
Rds On (Max) @ Id, Vgs:
450mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs:
2.3 nC @ 4.5 V
REACH Status:
REACH Unaffected
edacadModel:
FDG313N Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.7V, 4.5V
edacadModelUrl:
/en/models/977987
Drain to Source Voltage (Vdss):
25 V
Vgs (Max):
±8V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
750mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
50 pF @ 10 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SC-88 (SC-70-6)
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
950mA (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDG313
ECCN:
EAR99
