Maximum Drain Source Voltage:
900 V
Typical Gate Charge @ Vgs:
17 nC @ 10 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
47 W
Series:
QFET
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
9.19mm
Width:
4.7mm
Length:
10.16mm
Minimum Gate Threshold Voltage:
3V
Package Type:
TO-220F
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
4 A
Transistor Material:
Si
Maximum Drain Source Resistance:
4.2 Ω
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3 Full Pack
Rds On (Max) @ Id, Vgs:
4.2Ohm @ 2A, 10V
title:
FQPF4N90C
Vgs(th) (Max) @ Id:
5V @ 250µA
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Drain to Source Voltage (Vdss):
900 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
Not Applicable
Power Dissipation (Max):
47W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
960 pF @ 25 V
Mounting Type:
Through Hole
Series:
QFET®
Gate Charge (Qg) (Max) @ Vgs:
22 nC @ 10 V
Supplier Device Package:
TO-220F-3
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
4A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FQPF4
ECCN:
EAR99
